Topic Areas

Thin Film Growth and Characterization

  • Si, Strained Si, Ge, SiGe(C), SiC, Diamond, Silicide, Compound semiconductors
  • III-nitrides, Oxide semiconductors,High-k insulator, Low-k insulator
  • CVD, MBE, Selective epitaxy, Atomic layer control, Novel growth technique
  • Band engineering, Defect engineering, Simulation and modeling

Surface and Interface Control

  • Surface passivation and modification, Surface and interface chemistry, Schottky and ohmic contacts
  • Atomic scale characterization of surfaces and interfaces
  • Surface/interface issues in advanced devices

Formation and Characterization of Nanostructures

  • Nanodots, Nanowires, Superlattice, 2D materials, Self-assembling, Self-organization
  • Nanoscale characterization, In-situ characterization

Process and Device Technology

  • Impurity diffusion, Dry etching, Microfabrication, Isolation
  • SiGe gate, Source/drain and channel engineering, Base/emitter engineering
  • SOI, SGOI, III-V on Si, Wafer bonding, Virtual substrates and their Manufacturing
  • CMOS, HBT, BiCMOS, FeRAM, MODFET, SET, RTD, LED, LD, OEIC
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