Keynote/Invited Speakers

<<Keynote>>

Dr. Dan Mihai Buca, FZ-Jülich, Germany
  “SiGeSn Semiconductors: Challenges and Perspectives”

Prof. Tetsuo Endoh, Tohoku University, Japan
  “STT-MRAM and CMOS/MTJ Hybrid AI Processors for Low Power Edge System”

<<Invited>>

Area 1. Thin Film Growth and Characterization
  • Dr. Yuji Yamamoto, IHP, Germany
      “Group IV Heteroepitaxy for Advanced Electronics Devices Integrated in BiCMOS Technology”
  • Prof. Thomas Schröder, Leibniz Institute for Crystal Growths, Germany
      “Modern Growth, Characterization & Applications of SiGe Volume Crystals & Thin Films”
  • Prof. Kosuke O. Hara, University of Yamanashi, Japan
      “Practical Growth Processes of Silicide and Germanide Thin Films for Photovoltaic and Electronic Applications”
  • Prof. Tomonori Ito, Mie University, Japan
      “Computational Materials Science for Nitride Semiconductor Epitaxial Growth”
Area 2. Surface and Interface Control
  • Prof. Kazuo Tsutsui, Tokyo Institute of Technology, Japan
      “3D atomic Imaging of As doped in Si by Spectro-Photoelectron Holography”
  • Prof. Masahiro Hori, Shizuoka University, Japan
      “Charge Pumping with Electrically-Detected Magnetic Resonance (CP EDMR) and Its Application to Defects at/ near Si /SiO2 Interface “
  • Prof. Monica de Seta, Roma Tre University, Italy
      “Growth of Ge/SiGe Quantum Cascade Heterostructures”
  • Prof. Koji Kita, The University of Tokyo, Japan
      “Consideration on Thermodynamics and Kinetics of SiC Thermal Oxidation in O2 and H2O”
Area 3. Formation and Characterization of Nanostructures
  • Prof. Tomohiro Shimizu and Prof. Shoso Shingubara, Kansai University, Japan
      “Formation of Through-Si Via Using Metal-Assisted Chemical Etching Method”
  • Prof. Giovanni Isella, LNESS – Politecnico di Milano, Italy
      “SiGe: a material platform from near and mid-infrared photonics”
  • Dr. Hirokazu Tahara and Prof. Yoshihiko Kanemitsu, Kyoto University, Japan
      “Coherent Spectroscopy of Multiple Excitons in Quantum Dot Nanocrystals”
Area 4. Process and Device Technology
  • Prof. Masaharu Kobayashi, Institute of Industrial Science, The University of Tokyo, Japan
      “Emerging Ferroelectric Memory Devices Enabled by Material Innovation”
  • Prof. CheeWee Liu, National Taiwan University and National Nano Device Laboratories, Taiwan
      “GeSn CVD Epitaxy and Transistors”
  • Prof. Ross Millar, University of Glasgow, UK
      “High efficiency Ge-on-Si single photon avalanche diode detectors for the short-wave infrared”
  • Dr. Munetaka Noguchi, Mitsubishi Electric, Japan
      “Improved Channel Characteristics of 4H-SiC MOSFETs by Sulfur Doping Based on the Understanding of Carrier Transport in Inversion Layer”
  • Dr. Gong Xiao, National University of Singapore, Singapore
      ”GeSn-based Nano-electronic Devices and Photo Detectors”
Special session of “New Group IV Sendai Workshop”
  • Prof. Junichi Murota, Micro System Integration Center, Tohoku Univ., Japan
    “Formulation for In-Situ Co-Doping of B and C in CVD Si1-xGex Epitaxial Growth Based on the Langmuir-Type Mechanism”
  • Prof. Shinichi Takagi, The University of Tokyo, Japan
    “Bi-layer tunneling FET using group IV/oxide semiconductor hetero-structure”
  • Prof. Hiroshi Nakashima, Global Innovation Center, Kyushu University, Japan
    “Border-trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy”
  • Prof. Osamu Nakatsuka, Nagoya University, Japan
    “Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices”
  • Dr. Katsunori Makihara, Nagoya University, Japan
    ”Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices”

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