<<Keynote>>
Dr. Dan Mihai Buca, FZ-Jülich, Germany
“SiGeSn Semiconductors: Challenges and Perspectives”
Prof. Tetsuo Endoh, Tohoku University, Japan
“STT-MRAM and CMOS/MTJ Hybrid AI Processors for Low Power Edge System”
<<Invited>>
Area 1. Thin Film Growth and Characterization
- Dr. Yuji Yamamoto, IHP, Germany
“Group IV Heteroepitaxy for Advanced Electronics Devices Integrated in BiCMOS Technology” - Prof. Thomas Schröder, Leibniz Institute for Crystal Growths, Germany
“Modern Growth, Characterization & Applications of SiGe Volume Crystals & Thin Films” - Prof. Kosuke O. Hara, University of Yamanashi, Japan
“Practical Growth Processes of Silicide and Germanide Thin Films for Photovoltaic and Electronic Applications” - Prof. Tomonori Ito, Mie University, Japan
“Computational Materials Science for Nitride Semiconductor Epitaxial Growth”
Area 2. Surface and Interface Control
- Prof. Kazuo Tsutsui, Tokyo Institute of Technology, Japan
“3D atomic Imaging of As doped in Si by Spectro-Photoelectron Holography” - Prof. Masahiro Hori, Shizuoka University, Japan
“Charge Pumping with Electrically-Detected Magnetic Resonance (CP EDMR) and Its Application to Defects at/ near Si /SiO2 Interface “ - Prof. Monica de Seta, Roma Tre University, Italy
“Growth of Ge/SiGe Quantum Cascade Heterostructures” - Prof. Koji Kita, The University of Tokyo, Japan
“Consideration on Thermodynamics and Kinetics of SiC Thermal Oxidation in O2 and H2O”
Area 3. Formation and Characterization of Nanostructures
- Prof. Tomohiro Shimizu and Prof. Shoso Shingubara, Kansai University, Japan
“Formation of Through-Si Via Using Metal-Assisted Chemical Etching Method” - Prof. Giovanni Isella, LNESS – Politecnico di Milano, Italy
“SiGe: a material platform from near and mid-infrared photonics” - Dr. Hirokazu Tahara and Prof. Yoshihiko Kanemitsu, Kyoto University, Japan
“Coherent Spectroscopy of Multiple Excitons in Quantum Dot Nanocrystals”
Area 4. Process and Device Technology
- Prof. Masaharu Kobayashi, Institute of Industrial Science, The University of Tokyo, Japan
“Emerging Ferroelectric Memory Devices Enabled by Material Innovation” - Prof. CheeWee Liu, National Taiwan University and National Nano Device Laboratories, Taiwan
“GeSn CVD Epitaxy and Transistors” - Prof. Ross Millar, University of Glasgow, UK
“High efficiency Ge-on-Si single photon avalanche diode detectors for the short-wave infrared” - Dr. Munetaka Noguchi, Mitsubishi Electric, Japan
“Improved Channel Characteristics of 4H-SiC MOSFETs by Sulfur Doping Based on the Understanding of Carrier Transport in Inversion Layer” - Dr. Gong Xiao, National University of Singapore, Singapore
”GeSn-based Nano-electronic Devices and Photo Detectors”
Special session of “New Group IV Sendai Workshop”
- Prof. Junichi Murota, Micro System Integration Center, Tohoku Univ., Japan
“Formulation for In-Situ Co-Doping of B and C in CVD Si1-xGex Epitaxial Growth Based on the Langmuir-Type Mechanism” - Prof. Shinichi Takagi, The University of Tokyo, Japan
“Bi-layer tunneling FET using group IV/oxide semiconductor hetero-structure” - Prof. Hiroshi Nakashima, Global Innovation Center, Kyushu University, Japan
“Border-trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy” - Prof. Osamu Nakatsuka, Nagoya University, Japan
“Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices” - Prof. Seiichiro Higashi, Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan
“Direct Observation of Ultra-rapid Solid Phase Crystallization of Amorphous Silicon Films Irradiated by Micro-Thermal Plasma Jet” - Dr. Katsunori Makihara, Nagoya University, Japan
“Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices”